(Upper) PM-IR spectra of photo-CVD a-Si:H recorded after 30 min (A), 60 min (B) and 90 min (C).

(Lower) Dependence of mass-thickness and IR absorption intensity during film deposition.

Changes in PM-IR spectra of a-SiN_x during F₂ etching in the regions of Si-N (right) and Si-H (left) stretching vibration. A; as-deposited, B; after 180s F₂ etching, C;A-B, D;additional 180s F₂ etching, E;B-D.

Double modulation IR emission spectra of TiO_x during CVD.