2010年
・ Effect of Heat Treatment on the Hardness of Ti-Mo-N Films Deposited
by RF Reactive Magnetron Sputtering
S. Komiyama, Y. Sutou and J. Koike
Materials Transaction, 51(8) (2010) 1467-1473
・ Selective Formation of a SnO2 Cap Layer, Its Growth Behavior, and Oxidation
Resistance
Yoshito Fujii, Junichi Koike, Yuji Sutou, Zifeng Li and Koji Neishi
Japanese Journal of Applied Physics, 49 (2010) 05FA02-1-4
・ Effects of Water Desorption from SiO2 Substrates on the Thickness of Manganese
Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition
Kenji Matsumoto, Koji Neishi, Hitoshi Itoh, Hidenori Miyoshi, Hiroshi
Sato, Shigetoshi Hosaka and Junichi Koike
Japanese Journal of Applied Physics, 49 (2010) 05FA12-1-2
・ Roles of deformation twinning and dislocation slip in the fatigue failure
mechanism of AZ31 Mg alloys
J. Koike, N. Fujiyama, D. Ando and Y. Sutou
Scripta Materialia, 63 (2010) 747-750
・ Cu Alloy TFT Electrodes for Advanced Displays
J. Koike, K. Hirota, P. Yun and Y. Sutou
The proceedings of AM-FPD '10, (2010) 89-91
・ Electrical Properties and Microstructure of Cu-Mn Electrodes on Amorphous
In-Ga-Zn-O Semiconductors
Pilsang Yun and Junichi Koike
The proceedings of AM-FPD '10, (2010) 45-48
・ Relationship between deformation twinning and surface step formation
in AZ31 magnesium alloys
D. Ando, J. Koike and Y. Sutou
Acta Materialia, 58 (2010) 4316-4324
・ Crystallization behavior of Ge1Cu2Te3 amorphous film
Y. Sutou, T. Kamada, Y. Saito, M. Sumiya and J. Koike
2010 Materials Research Society Symposium Proceedings, 1251 (2010) H05-08
・ Electrical Resistance Change with Crystallization in Si-Te Amorphous Thin
Films
Y. Saito, Y. Sutou and J. Koike
2010 Materials Research Society Symposium Proceedings, 1251 (2010) H06-07
・ Ti-Mo-N反応性スパッタ薄膜の硬さに及ぼす熱処理の効果
小宮山翔子、須藤祐司、小池淳一
日本金属学会誌, 74 (2010) 135-141
・ The Relationship between Grain Boundary Sliding and Anisotropic Dislocation
Plasticity in AZ31 Magnesium Alloys at Room Temperature
D. Ando, Y. Sutou and J. Koike
Magnesium Technology, (2010) 245-247
・ Graded composition and valence states in self-forming barrier layers
at Cu-Mn/SiO2 interface
Y. Otsuka, J. Koike, H. Sako, K. Ishibashi, N. Kawasaki, S. M. Chung
and I. Tanaka
Applied Physics Letters, 96 (2010) 012101-1-012101-3
2009年
・ The Microstructure and Mechanical Properties of Ti-Mo-N Coating Films
S. Komiyama, Y. Sutou and J. Koike
Proc. PFAM XVIII, 4 (2009) 2007-2016
・ Optimization of source-drain process with Cu-Mn alloys
J. Koike, M. Sano, K. Hirota, Y. Sutou and K. Neishi
Proc. Internaional Display Workshop 2009, (2009)
・ Selective formation of a SnO2 cap layer, its growth behavior and oxidation
resistance
Y. Fujii, J. Koike, Y. Sutou and K. Neishi
Proc. Advanced Metallization Conference, (2009) 118-119
・ Effect of water desorption from dielectric substrates on the thickness
of CVD-MnOx diffusion barrier layer
K. Matsumoto, K. Neishi, H. Itoh, H. Miyoshi, H. Sato, S. Hosaka and
J. Koike
Proc. Advanced Metallization Conference, (2009) 114-115
・ Thin MnO barrier formation with CVD for Cu contact plug on nickel silicide
K. Neishi, T. Sagawa, Y. Sutou and J. Koike
Proc. Advanced Metallization Conference, (2009) 3-4
・ Electrical resistance and structural changes on crystallization process
of amorphous Ge-Te thin films
Y. Saito, Y. Sutou and J. Koike
Proc. 2009 MRS Spring Meeting, (2009) 143-148
・ Electronic Transport Properties of Cu/MnOx/SiO2/p-Si MOS Devices
V. K. Dixit, K. Neishi and J. Koike
Proc. 2009 MRS Spring Meeting, (2009) 105-109
・ Adhesion and Cu diffusion barrier properties of a MnOx barrier layer formed with thermal MOCVD
K. Neishi, D. Vijay, S. Aki, J. Koike, K. Matsumoto, H. Sato, H. Itoh
and S. Hosaka
Proc. 2009 MRS Spring Meeting, (2009) 99-104
・ CVD法による先端LSI-Cu配線用MnOxバリア層形成と信頼性評価
根石浩司、V. K. Dixit、松本賢治、伊藤仁、佐藤浩、保坂重敏、小池淳一
LSIにおける原子輸送・応力問題第14回研究会予稿集, (2009) 29-32
・ マグネシウム合金の室温変形機構 -変形双晶に注目して-
小池淳一
軽金属, 59 (2009) 272-277
・ Influence of moisture on the CVD formation of a MnOx barrier layer
Neishi K, Matsumoto K, Sato H, Itoh H, Hosaka S, Koike J
Proc. Advanced Metallization Conference, (2009) 307-311
・ Deposition Behavior and Diffusion Barrier Property of CVD MnOx
Matsumoto K, Neishi K, Itoh H, Sato H, Hosaka S, Koike J
Proc. of the 2009 IEEE International Interconnect Technology Conference,
(2009) 197-199
・ Analysis of dielectric constant of a self-forming barrier layer with Cu-Mn alloy on TEOS-SiO2
Chung SM, Koike J
Journal of Vaccum Science & Technology B, 27 (2009) L28-L31
・ The Role of Deformation Twin during Fracture Behavior in AZ31
D. Ando and J. Koike
Magnesium, 8th International Conference on Magnesium Alloys their Applications 8, (2009) 538-543
・ Microstructural Investigation of Twins Under the Fracture Surface in AZ31
Magnesium Alloys
D. Ando and J. Koike
Proc. TMS, Magnesium Technology, (2009) 537-540
・ Resistivity reduction by external oxidation Cu-Mn alloy films for semiconductor
interconnect application
J. Iijima, Y. Fujii, K. Neishi and Junichi Koike
Journal of Vacuum Science & Technology B, 27(4) (2009) 1963-1968
・ Chemical Vapor Deposition of Mn and Mn Oxide and their Step Coverage and
Diffusion Barrier Properties on Patterned Interconnect Structures
Kenji Matsumoto, Koji Neishi, Hitoshi Itoh, Hiroshi Sato, Shigetoshi
Hosaka and Junichi Koike
Applied Physics Express, 2 (2009) 036503
・ Phase formation and growth kinetics of an interface layer in Ni/SiC
Kenichiro Terui, Atsuko Sekiguchi, Hiroshi Yoshizaki and Junichi Koike
Materials Science Forum, 600-603 (2009) 631-634
2008年
・ Formation of Mn Oxide with Thermal CVD and its Diffusion Barrier Property
Between Cu and SiO2
Koji Neishi, Shiro Aki, Jun Iijima and Junichi Koike
Proc. 2008 MRS Spring Meeting, 1079 (2008) N-03-11
・ Effects of Plasma Surface Treatment on the Self-forming Barrier Process
in Porus SiOCH
Seung-Min Chung, Junichi Koike and Zsolt Tokei
Proc. 2008 MRS Spring Meeting, 1079 (2008) N-03-10
・ Selective Oxidation and Resistivity Reduction of Cu-Mn Alloy Films for
Self-forming Barrier Process
Jun Iijima, Yoshito Fujii, Koji Neishi and Junichi Koike
Proc. 2008 MRS Spring Meeting, 1079 (2008) N-03-09
・ Possibilities and problems of self-forming barrier process for advanced
LSI metallization
Koike J, Iijima J, Neishi K
Advanced Metallization Conference, (2008) 3-9
・ Finite element method analysis of nanoscratch test for the evaluation of
interface adhesion strength in Cu thin films on Si substrate
A. Sekiguchi and J. Koike
Japanese Jounal of Applied Physics, 47(1) (2008) 249-256
・ Evaluation of interface adhesion strength in Cu/(Ta-x%N,Ta/TaN)/SiO2/Si by nanoscratch test
A. Sekiguchi and J. Koike
Japanese Journal of Applied Physics, 47(2) (2008) 1042-1049
・ Formation of a manganese oxide barrier layer with thermal chemical vapor
deposition for advanced large-scale integrated interconnect structure
K. Neishi, S. Aki, K. Matsumoto, H. Sato, H. Itoh, S. Hosaka and J. Koike
Applied Physics Letters, 93 (2008) 032106
・ Stress relaxation during isothermal annealing in electroplated Cu films
Soo-Jung Hwang, Young-Chang Joo and Junichi Koike
Thin Solid Films, 516 (2008) 7588-7594
・ Origin of the Anomalous {1012} Twinning during Tensile Deformation of Mg
Alloy Sheet
Koike J, Sato Y, Ando D
MATERIALS TRANSACTIONS, 49 (2008) 2792
2007年
・ AZ31マグネシウム合金における変形誘起表面起伏と二重双晶の関係
安藤大輔、小池淳一
日本金属学会誌、71(9) (2007) 684-687
・ Relationship between deformation-induced surface relief and double twinning
AZ31 magnesium alloy
D. Ando and J. Koike
JOUNAL OF THE JAPAN INSTITUTE OF METALS, 71 (2007) 684
・ Growth behavior of self-formed barrier at Cu-Mn/SiO2 interface at 250-450 ℃
M. Haneda, J. Iijima and J. Koike
Applied Physics Letters, 90 (2007) 252107
・ Growth kinetics and thermal stability of a self-formed barrier layer at Cu-Mn/SiO2 interface
J. Koike, M. Haneda, J. Iijima, K. Neishi et al.
Journal of Applied Physics, 102 (2007) 043527
・ The effects of Cr oxidation and polyimide degradation on interface adhesion
strength in Cu/Cr/polyimide flexible films
T. Miyamura and J. Koike
Materials Science and Engineering A, 620 (2007) 445-446
・ 配線信頼性における界面密着性の役割
小池淳一、貝沼亮介、関口貴子、飯島純、根石浩司
表面科学、28(2) (2007) 67-71
2006年
・ Growth behavior of self-formed barrier using Cu-Mn alloys at 350 to 600
℃
J. Iijima, M. Haneda, J. Koike
Proc. of the IEEE 2006 International Interconnect Technology Conference,
(2006)
・ Cu alloy metallization for self-formed barrier process
J. Koike, M. Haneda, J. Iijima and M. Wada
Proc. of the IEEE 2006 International Interconnect Technology Conference,
(2006)
・ Highly reliable copper dual-damascene interconnects with self-formed MnSixOy barrier layer
T. Usui, H. Nasu, S. Takahashi, N. Shimizu, Y. Yoshimaru, H. Shibata
and J. Koike
IEEE Transactions on Electron Devices, 53(10) (2006) 2492-2499
2005年
・ Low Resistive and Highly Reliable Cu Dual-Damascene Interconnect Technology
Using Self-Formed MnSixOy Barrier Layer
T. Usui, H. Nasu, J. Koike, M. Wada, S. Takahashi, N. Shimizu, T. Nishikawa, M. Yoshimaru and H. Shibata
Proc. of the IEEE 2005 International Interconnect Technology Conference,
(2005) 188-190
・ Geometrical criterion for the activation of prismatic slip in AZ61 Mg alloy
sheets deformed at room temperature
J. Koike, R. Ohyama
Acta Materialia, 53 (2005) 1963
・ Enhanced deformation mechanisms by anisotropic plasticity in polycrystalline
Mg alloys at room temperature
J. Koike
Metall. Trans. A-Phys. Metall. Mater. Sci., 36A (2005) 1689
・ Evolution of stress-induced surface damage and stress-relaxation of electroplated
Cu films at elevated temperatures
S. J. Hwang, J. Koike and Y. C. Joo
Materials Science Forum, 475-479 (2005) 3641-3646
・ Self-forming diffusion barrier layer in Cu-Mn alloy metallization
J. Koike, M. Wada
Applied Physics Letters, 87 (2005) 041911
2004年
・ Dislocation plasticity and complementary deformation mechanisms in polycrystalline
Mg alloys
J. Koike
Designing, Processing and Properties of Advanced Engineering Materials,
PTS1 and 2 Materials Science Forum, 449-4 (2004) 665
・ Mechanical Processes of Nanoscratch Test for the Measurement of Interface
Adhesion Strength
A. Sekiguchi and J. Koike
Fatigue and Fracture of Engineering Materials, (2004)
東北大学 工学研究科 知能デバイス材料学専攻 小池研究室